The LISITE actively contributes to the advancement of digital sciences and technologies. Its research spans a broad range of disciplines, from artificial intelligence and cybersecurity to embedded systems and telecommunications.
LISITE’s publications reflect its expertise and pivotal role in the evolution of digital technologies, further strengthening the academic and scientific excellence of Isep.
707 documents
- Isabelle Ferain, Luigi Pantisano, Anil Kottantharayil, Julie Pietry, Lionel Trojman, et al.. Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks. Microelectronic Engineering, 2007, 84 (9-10), pp.1882-1885. ⟨10.1016/j.mee.2007.04.074⟩. ⟨hal-02952528⟩
- Xun Zhang, H. Rabah, Sébastien J. Weber. Auto-adaptive reconfigurable architecture for scalable multimedia applications. 2007 2nd NASA/ESA Conference on Adaptive Hardware and Systems, Aug 2007, Edinburgh, France. ⟨10.1109/ahs.2007.34⟩. ⟨hal-01874046⟩
- M. Aoulaiche, M. Houssa, W. Deweerd, Lionel Trojman, T. Conard, et al.. Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI. IEEE Electron Device Letters, 2007, 28 (7), pp.613-615. ⟨10.1109/LED.2007.899435⟩. ⟨hal-02952264⟩
- Barry O'Sullivan, Vidya Kaushik, J.-L. Everaert, Lionel Trojman, Lars-Ke Ragnarsson, et al.. Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation. IEEE Transactions on Electron Devices, 2007, 54 (7), pp.1771-1775. ⟨10.1109/TED.2007.898460⟩. ⟨hal-02952277⟩
- M.B. Zahid, L. Pantisano, R. Degraeve, M. Aoulaiche, Lionel Trojman, et al.. Advanced electrical characterization toward (sub) 1nm EOT HfSiON ¿ hole trapping in PFET and L-dependent effects. 2007 IEEE Symposium on VLSI Technology, Jun 2007, Kyoto, Japan. pp.32-33, ⟨10.1109/VLSIT.2007.4339715⟩. ⟨hal-02952244⟩
- A. Shickova, N. Collaert, P. Zimmerman, M. Demand, E. Simoen, et al.. Novel, Effective and Cost-Efficient Method of Introducing Fluorine into Metal/Hf-based Gate Stack in MuGFET and Planar SOI Devices with Significant BTI Improvement. 2007 IEEE Symposium on VLSI Technology, Jun 2007, Kyoto, Japan. pp.112-113, ⟨10.1109/VLSIT.2007.4339748⟩. ⟨hal-02952222⟩
- L. Pantisano, Lionel Trojman, S. Severi, E.San Andres, C. Kerner, et al.. Line width dependent mobility in high-k a comparative performance study between FUSI and TiN. 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Apr 2007, Hsinchu, Japan. pp.1-2, ⟨10.1109/VTSA.2007.378909⟩. ⟨hal-02952258⟩
- Lionel Trojman, Lars-Ke Ragnarsson, Barry O'Sullivan, Maarten Rosmeulen, Vidya Kaushik, et al.. High-k Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality—A Mobility Study. IEEE Transactions on Electron Devices, 2007, 54 (3), pp.497-503. ⟨10.1109/TED.2006.890230⟩. ⟨hal-02952297⟩
- Enrique San Andres, Luigi Pantisano, Philippe Roussel, Maria Toledano-Luque, Lionel Trojman, et al.. The Electrochemical Society High-k Characterization by RFCV. ECS Transactions, 2007, 11 (4). ⟨hal-02953456⟩
- Florence Rossant, Isabelle Bloch. Robust and Adaptive OMR System Including Fuzzy Modeling, Fusion of Musical Rules, and Possible Error Detection. EURASIP Journal on Advances in Signal Processing, 2007, ⟨10.1155/2007/81541⟩. ⟨hal-02559245⟩
Powered by HAL 