Lionel TROJMAN
Director of Research, Professor, PhD, Accredited to Supervise Research
Lionel Trojman was born in Marseille, France. He earned a Bachelor’s degree in Physics from the Faculté Saint-Charles, University of Provence (Marseille) in 2002. In 2004, he obtained a Master’s degree in Applied Physics in Micro- and Nanoelectronics, as well as a Master’s degree in Electrical Engineering (Microelectronics and Telecommunications) from the École Polytechnique Universitaire de Marseille, University of Provence.
In 2009, he defended his PhD in Electrical Engineering at KULeuven, in partnership with IMEC (Belgium). The same year, he became a full professor in the Department of Electrical and Electronic Engineering at USFQ, Ecuador, where he worked until 2019. Since then, he has been a professor at Isep, France.
His research focuses on transport in ultra-scaled MOSFETs (down to 22 nm) using high-k UTEOT dielectrics with conventional and novel architectures (FDSOI) for CMOS technologies. He also works on electronic memories (ReRAM, MTJ) and power devices using GaN technology. More recently, he has been involved in the design of integrated circuits in 180, 90, and 32/28 nm technology nodes, applied to the Internet of Things (IoT).
Search interests:
> Micro- and Nanoelectronics
> Solid-State Physics
> IoT, SoC, SiP, Integrated Circuits
> Semiconductor Devices
Teaching:
> Digital and Analog Electronics
Journals:
- E. Garzón, R. De Rose, F. Crupi, L. Trojman, G. Finocchio, M. Carpentieri, M. Lanuzza, “Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework”, VLSI Journal, Special issue of Integration, (2019) Volume 71, , Pages 56-69 March 2020
- E. Acurio, L. Trojman, F. Crupi, B. DeJager, S. Decoutere, “Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes under ON-state stress”, IEEE, Transactions on Device and Materials Reliability, Vol. 20, N.1
- E. Garzón, R. De Rose, F. Crupi, L. Trojman, M. Lanuzza, “Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework”, Microelectronic Engineering, Vol. 215, p. 111009, 2019
- L. Trojman, L-A Ragnarsson, N. Collaert, “Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model”, Solid-State Electronic, Vol. 154, pp. 24-30, 2019
- E. Acurio, F. Crupi, N. Ronchi, B. De Jaeger, B. Bakeroot, S. Decoutere and L. Trojman, “Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination”, IEEE Transaction on Electron Devices, Vol. 66, n. 2, pp. 883-889, 2019
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